mar.2002 CM100E3U-12F application brake mitsubishi igbt modules CM100E3U-12F high power switching use ? i c ................................................................... 100a ? v ces ............................................................ 600v ? insulated type ? 1-element in a pack outline drawing & circuit diagram dimensions in mm rtc circuit diagram c2e1 e2 c1 g2 e2 cm g1 e1 e2 g2 c2 e1 c1 e2 27 24 24 94 16 16 2.5 21.2 7.5 2.5 25 7 17 23 24 11 4 13 48 23 4 12 13.5 1max 80 0.25 2 6.5 mounting holes 3?5 nuts 12mm deep tab #110. t=0.5 30 +1 ?.5 label tc measured point
mar.2002 mitsubishi igbt modules CM100E3U-12F high power switching use maximum ratings (tj = 25 c) electrical characteristics (tj = 25 c) 600 20 100 200 100 200 350 600 100 200 40 ~ +150 40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 v v a a a a w v a a c c v n m n m g collector-emitter voltage gate-emitter voltage maximum collector dissipation repetitive peak reverse voltage forward current junction temperature storage temperature isolation voltage torque strength weight g-e short c-e short t c = 25 c pulse (note 2) t c = 25 c pulse (note 2) t c = 25 c clamp diode part t c = 25 c clamp diode part pulse clamp diode part (note 2) charged part to base plate, ac 1 min. main terminal m5 mounting holes m6 typical value symbol parameter collector current emitter current conditions unit ratings v ces v ges i c i cm i e ( note 1 ) i em ( note 1 ) p c ( note 3 ) v rrm i f i fm t j t stg v iso note 1. i e , v ec , t rr , q rr , die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (fwdi). 2. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 3. junction temperature (t j ) should not increase beyond 150 c. * 1 : tc measured point is indicated in outline drawing. * 2 : typical value is measured by using shin-etsu silicone g-746 . * 3 : if you use this value, r th(f-a) should be measured just under the chips. v ce = v ces , v ge = 0v v ge = v ces , v ce = 0v t j = 25 c t j = 125 c v cc = 300v, i c = 100a, v ge = 15v v cc = 300v, i c = 100a v ge1 = v ge2 = 15v r g = 6.3 ? , inductive load switching operation i e = 100a i e = 100a, v ge = 0v igbt part fwdi part tc measured point is just under the chips i f = 100a, clamp diode part i f = 100a v cc = 300v, v ge1 = v ge2 = 15v r g = 6.3 ? , inductive load switching operation, clamp diode part clamp diode part case to fin, thermal compound applied *2 (1/2 module) i c = 10ma, v ce = 10v i c = 100a, v ge = 15v v ce = 10v v ge = 0v 1 20 2.2 27 1.8 1 100 80 300 250 150 2.6 63 0.35 0.70 0.28 *3 2.6 150 0.70 ma a nf nf nf nc ns ns ns ns c v ? c/w c/w c/w v ns c c/w c/w 1.6 1.6 620 1.9 1.9 0.07 6.3 6v v 57 ns collector cutoff current gate leakage current input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time reverse recovery time reverse recovery charge emitter-collector voltage external gate resistance thermal resistance forward voltage drop reverse recovery time reverse recovery charge thermal resistance *1 contact thermal resistance gate-emitter threshold voltage collector-emitter saturation voltage thermal resistance *1 i ces i ges c ies c oes c res q g t d(on) t r t d(off) t f t rr ( note 1 ) q rr ( note 1 ) v ec( note 1 ) r g r th(j-c) q r th(j-c) r r th(j-c ) q v fm t rr q rr r th(j-c) r r th(c-f) symbol parameter test conditions v ge(th) v ce(sat) unit typ. limits min. max.
mar.2002 mitsubishi igbt modules CM100E3U-12F high power switching use performance curves 40 80 120 160 200 0 0 0.5 1 1.5 2 2.5 3 3.5 4 15 9 7.5 11 10 10 0 10 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 0 0.5 1 1.5 2 2.5 3 3.5 4 10 1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 1 2 10 0 357 2 10 1 357 2 10 2 357 2.5 3 2 1.5 1 0.5 0 160 200 0 40 80 120 5 4 3 2 1 0 6 8 10 12 14 16 18 20 10 0 10 1 23 57 10 2 23 57 10 3 23 57 2 3 5 7 10 0 10 1 2 3 5 7 10 2 2 3 5 7 10 3 t j =25 c v ge =20v 9.5 8.5 8 t j = 25 c t j = 125 c v ge = 15v i c = 200a i c = 100a i c = 40a t j = 25 c v ge = 0v c res c oes c ies v cc = 300v v ge = 15v r g = 6.3 ? t j = 125 c conditions: t d(off) t d(on) t f t r t j = 25 c output characteristics (typical) collector current i c (a) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) gate-emitter voltage v ge (v) free-wheel diode and clamp diode forward characteristics (typical) emitter current i e (a) emitter-collector voltage v ec (v) capacitance? ce characteristics (typical) half-bridge switching characteristics (typical) capacitance c ies , c oes , c res (nf) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics (typical) collector-emitter saturation voltage v ce (sat) (v) switching times (ns) collector current i c (a)
mar.2002 mitsubishi igbt modules CM100E3U-12F high power switching use 10 0 10 1 23 57 10 2 23 57 10 0 10 1 2 3 5 7 10 2 2 3 5 7 t rr i rr 10 1 10 ? 10 ? 10 ? 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? 7 5 3 2 7 5 3 2 10 ? 23 57 23 57 23 57 23 57 10 1 10 ? 10 ? 10 0 10 ? 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 3 2 23 57 23 57 0 4 2 8 6 12 10 16 14 20 18 0 100 300 500 700 900 single pulse t c = 25 c i c = 100a v cc = 300v v cc = 200v conditions: v cc = 300v v ge = 15v r g = 6.3 ? t j = 25 c reverse recovery characteristics of clamp diode (typical) emitter current i e (a) transient thermal impedance characteristics (igbt part & fwdi part & clamp diode part) normalized transient thermal impedance z th (j?) ( c/w) tmie (s) gate charge characteristics (typical) gate-emitter voltage v ge (v) gate charge q g (nc) igbt part: per unit base = r th(j?) = 0.35 c/ w fwdi part: per unit base = r th(j?) = 0.7 c/ w clamp di part: per unit base = r th(j c) = 0.7 c/ w reverse recovery time t rr (ns) reverse recovery current l rr (a)
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